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首页> 外文OA文献 >Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy
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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

机译：氨分子束外延生长无意掺杂的SiC半绝缘GaN和蓝宝石上的高电阻GaN的生长动力学和电子性质

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摘要

Growth of unintentionally doped (UID) semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature (RT) resistivity of 10(11) W cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N(Ga), similar to the \u201cEL2\u201d center (arsenic antisite) in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10(6)\u201310(9) W cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740\u2013780 \ub0C, and a high ammonia flux (beam equivalent pressure of 1x10\u22124 Torr), which ensures supersaturated coverage of surface adsorption sites with NHx radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.
机译：报道了使用氨分子束外延技术在SiC上无意掺杂（UID）的半绝缘GaN和在蓝宝石上的高电阻GaN的生长。 SiC上的半绝缘UID GaN的室温（RT）电阻率为10（11）W cm，定义明确的活化能为1.0 eV。意外的供体和受体的补偿平衡是费米能级降低到中间能级，并受1.0 eV深能级缺陷控制，该缺陷被认为与氮反位N（Ga）有关，类似于\ u201cEL2非故意掺杂的半绝缘GaAs中的中心（砷抗位）。蓝宝石上的高电阻GaN在10（6）\ u201310（9）W cm的范围内显示出RT电阻率，活化能在0.25到0.9 eV之间变化。在这种情况下，浅层供体的补偿是不完全的，费米能级由比1.0 eV深中心更浅的能级控制。通过对生长过程中表面动力学的实验研究，研究了电阻型UID GaN材料的生长机理。所需的生长方式包括740 \ u2013780 \ ub0C的适度生长温度范围和高氨通量（束当量压力为1x10 \ u22124 Torr），这确保了NHx自由基对表面吸附位的过饱和覆盖。这种高度富氮的生长条件导致二维逐层生长并减少了氧的掺入。

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